Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode

	Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode
	Li C.; Zhang Z.; Chen H.; Xie X.; Shen D.
	2013
发表期刊	Thin Solid Films
ISSN	ISBN/00406090
期号	548
摘要	In this paper, we report a vertical Schottky ultraviolet photodetector based on the MgZnO:Al transparent electrode. The vertical MgZnO:Al/MgZnO/Au photodetector was fabricated on the sapphire substrate, which shows a good Schottky contacting character. The transparent and conducting MgZnO:Al thin film was developed by magnetron sputtering and annealed to fit the request of our detection. The device is structured vertically in an order of sapphire/MgZnO:Al/MgZnO/Au. The device shows a good Schottky contacting character. The maximum responsivities of the photodetector are 0.0266 mA/W at 0 V bias and 13.31 mA/W under 10 V backward bias, respectively. The peak response wavelength is located at 340 nm and cut-off is at the wavelength of 355 nm. The turn-on voltage is 2.0 V and the breakdown voltage is 40 V. The leakage current is less than 70 pA at a reverse bias of 15 V. 2013 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
WOS记录号	WOS:000327530300074
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40928
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li C.,Zhang Z.,Chen H.,et al. Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode[J]. Thin Solid Films,2013(548).
APA	Li C.,Zhang Z.,Chen H.,Xie X.,&Shen D..(2013).Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode.Thin Solid Films(548).
MLA	Li C.,et al."Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode".Thin Solid Films .548(2013).

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