Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation | |
Zhang N.; Hu Y.; Liu X. | |
2013 | |
发表期刊 | Applied Physics Letters |
ISSN | ISBN/00036951 |
期号 | 103 |
摘要 | High-performance transparent organic thin film transistors using a WO 3/Ag/WO3 (WAW) multilayer as the source and drain electrodes have been developed without breaking the vacuum. The WAW electrodes were deposited by thermal evaporation at room temperature, leading to little damage to organic film. The optimized WAW electrode shows high transmittance (86.57%), low sheet resistance (11 /sq), and a high work function (5.0 eV). Consequently, we obtained high performance devices with mobility of 8.44 10-2 cm2/V·s, an on/off ratio of approximately 1.2 106, and an average visible range transmittance of 81.5%. 2013 AIP Publishing LLC. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/40911 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang N.,Hu Y.,Liu X.. Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation[J]. Applied Physics Letters,2013(103). |
APA | Zhang N.,Hu Y.,&Liu X..(2013).Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation.Applied Physics Letters(103). |
MLA | Zhang N.,et al."Transparent organic thin film transistors with WO3/Ag/WO 3 source-drain electrodes fabricated by thermal evaporation".Applied Physics Letters .103(2013). |
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