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Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene
Li D. F.; Zhan D.; Yan J. X.; Sun C. L.; Li Z. W.; Ni Z. H.; Liu L.; Shen Z. X.
2013
发表期刊Journal of Raman Spectroscopy
ISSNISBN/0377-0486
卷号44期号:1
摘要We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D+G bands, and located at similar to 3240 and similar to 4260 cm(-1), respectively. The graphene thickness and stacking geometry effects for these two modes are systematically studied. The features of the 2D' band, which arises from intravalley double resonance, are not sensitive to the variation of thickness with single Lorentzian peak and fixed linewidth. We explain it theoretically by calculating the phonon dispersion mode in k-space and find that the flat band region of longitudinal optical phonon near G point is the mechanism leading to the 2D' band nonsplit. With the thickness increasing, the band position exhibits blueshift and the linewidth increases for the 2D + G band. With changing thickness and stacking geometry of graphene, the intensities of these two high-frequency bands show obvious different evolution compared with that of G band. Copyright (C) 2012 John Wiley & Sons, Ltd.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/40904
专题中科院长春光机所知识产出
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Li D. F.,Zhan D.,Yan J. X.,et al. Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene[J]. Journal of Raman Spectroscopy,2013,44(1).
APA Li D. F..,Zhan D..,Yan J. X..,Sun C. L..,Li Z. W..,...&Shen Z. X..(2013).Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene.Journal of Raman Spectroscopy,44(1).
MLA Li D. F.,et al."Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene".Journal of Raman Spectroscopy 44.1(2013).
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