TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate

	TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate
	Zhao L.; Sun J. G.; Guo Z. X.; Miao G. Q.
	2013
发表期刊	Materials Letters
ISSN	ISBN/0167-577X
期号	106
摘要	Dislocation behavior in InxGa1-xAs/InP (100) (x=0.82) grown by low pressure chemical vapor deposition (LP-MOCVD) at temperature about 430 degrees C was analyzed thoroughly by [110] cross-section transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and high resolution transmission electron microscopy (HRTEM). The 2% lattice mismatch between InP (100) and InxGa1-xAs (x=0.82) results in various types of defects such as stacking faults as well as 60 degrees and 90 degrees threading dislocations. Very high density of threading dislocation (TD) was shown in the InxGa1-xAs (x=0.82) epilayer. The epilayer was incompletely strain relaxed by the formation and multiplication of MDs. (C) 2013 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40895
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao L.,Sun J. G.,Guo Z. X.,et al. TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate[J]. Materials Letters,2013(106).
APA	Zhao L.,Sun J. G.,Guo Z. X.,&Miao G. Q..(2013).TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate.Materials Letters(106).
MLA	Zhao L.,et al."TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate".Materials Letters .106(2013).

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