Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots

	Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots
	Gu P.; Zhang Y.; Feng Y.; Zhang T.; Chu H.; Cui T.; Wang Y.; Zhao J.; Yu W. W.
	2013
发表期刊	Nanoscale
ISSN	ISBN/20403364
卷号	5 期号:21
摘要	PbSe quantum dots (QDs) were employed as real-time and on-chip temperature sensors to monitor the surface temperature of GaN LED chips. The temperature-dependent photoluminescence spectra were achieved and confirmed to be a good method for surface temperature sensing in a micro- to nano-region. The nanosized QD sensors did not influence the LED emission spectrum due to their infrared emission and little absorption. The surface temperature of GaN LED chips was analyzed at different working times and voltages. The temperature sensitivity characterized by the photoluminescence peak position of PbSe QDs was found to be 0.15 nm C-1 in a range of 30-120C and the precision was determined to be 3C. The QD surface temperature sensors were confirmed to have good reversibility and repeatability. 2013 The Royal Society of Chemistry.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40830
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gu P.,Zhang Y.,Feng Y.,et al. Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots[J]. Nanoscale,2013,5(21).
APA	Gu P..,Zhang Y..,Feng Y..,Zhang T..,Chu H..,...&Yu W. W..(2013).Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots.Nanoscale,5(21).
MLA	Gu P.,et al."Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots".Nanoscale 5.21(2013).

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