New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis

	New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis
	Zhang L. L.; Zhang J. H.; Zhang X.; Hao Z. D.; Zhao H. F.; Luo Y. S.
	2013
发表期刊	Acs Applied Materials & Interfaces
ISSN	ISBN/1944-8244
卷号	5 期号:24
摘要	Synthesis and luminescent properties of Ce3+-doped SrAlSi4N7 yellowemitting phosphor are reported. In comparison with YAG: Ce3+, the phosphor exhibits smaller thermal quenching and a broader emission band centering at 555 nm with a bandwidth as large as 115 nm, being suitable for fabricating high color rendering white LED. It is observed in material synthesis that intense luminescence can be achieved only in case of excessive AlN in the raw materials. The role of the excessive AlN is studied. The mechanism for existence of edge-sharing [AlN4] tetrahedral, which is unreasonable according to the aluminum avoidance principle, is discussed in detail.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40776
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang L. L.,Zhang J. H.,Zhang X.,et al. New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis[J]. Acs Applied Materials & Interfaces,2013,5(24).
APA	Zhang L. L.,Zhang J. H.,Zhang X.,Hao Z. D.,Zhao H. F.,&Luo Y. S..(2013).New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis.Acs Applied Materials & Interfaces,5(24).
MLA	Zhang L. L.,et al."New Yellow-Emitting Nitride Phosphor SrAlSi4N7:Ce3+ and Important Role of Excessive AlN in Material Synthesis".Acs Applied Materials & Interfaces 5.24(2013).

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