Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer

	Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer
	Xie X. H.; Zhang Z. Z.; Li B. H.; Wang S. P.; Jiang M. M.; Shan C. X.; Zhao D. X.; Chen H. Y.; Shen D. Z.
	2013
发表期刊	Applied Physics Letters
ISSN	ISBN/0003-6951
卷号	102 期号:23
摘要	We report on a vertical geometry Mott-type visible (VIS)-blind Ultraviolet (UV) photodetector which was fabricated based on wurzite MgZnO (W-MgZnO) with a cubic MgZnO (C-MgZnO) anti-reflection layer. The C-MgZnO layer plays two roles in the detector, not only the conventional optical part but also electrical part. Photon-generated holes were restricted due to valence band offset. More "hot" electrons injected over a reduced Mott potential barrier at the metal-semiconductor interface, resulting in additional current contributing to photoresponse. This dual-function structure is a highly compact and wavelength-resonant UV detector, with a spectral response high-gain and fast. (C) 2013 AIP Publishing LLC.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40761
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xie X. H.,Zhang Z. Z.,Li B. H.,et al. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer[J]. Applied Physics Letters,2013,102(23).
APA	Xie X. H..,Zhang Z. Z..,Li B. H..,Wang S. P..,Jiang M. M..,...&Shen D. Z..(2013).Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer.Applied Physics Letters,102(23).
MLA	Xie X. H.,et al."Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer".Applied Physics Letters 102.23(2013).

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