A model for thickness effect on the band gap of amorphous germanium film

	A model for thickness effect on the band gap of amorphous germanium film
	Wang X.-D.; Wang H.-F.; Chen B.; Li Y.-P.; Ma Y.-Y.
	2013
发表期刊	Applied Physics Letters
ISSN	ISBN/00036951
期号	102
摘要	A Mott-Davis-Paracrystalline model was proposed to interpret thickness effect of the band gap for amorphous germanium (a-Ge). We believe that a-Ge has a semiconductor-alloy-like structure, it may contain medium-range order (MRO) and continuous random network (CRN) simultaneously and there is a dependence of MRO/CRN ratio on film thickness and preparation methods/parameters. For MRO is dominant, thickness effect can be described by one-dimensional quantum confinement (ODQC) effect of nanocrystals and strain-induced shrinkage of the band gap; For CRN is dominant, thickness dependence can be interpreted by changes in the quality of a CRN and ODQC effect of nanoamorphous phase. 2013 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40754
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.-D.,Wang H.-F.,Chen B.,et al. A model for thickness effect on the band gap of amorphous germanium film[J]. Applied Physics Letters,2013(102).
APA	Wang X.-D.,Wang H.-F.,Chen B.,Li Y.-P.,&Ma Y.-Y..(2013).A model for thickness effect on the band gap of amorphous germanium film.Applied Physics Letters(102).
MLA	Wang X.-D.,et al."A model for thickness effect on the band gap of amorphous germanium film".Applied Physics Letters .102(2013).

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