MgZnO avalanche photodetectors realized in Schottky structures

	MgZnO avalanche photodetectors realized in Schottky structures
	Yu J.; Shan C. X.; Liu J. S.; Zhang X. W.; Li B. H.; Shen D. Z.
	2013
发表期刊	Physica Status Solidi-Rapid Research Letters
ISSN	ISBN/1862-6254
卷号	7 期号:6
摘要	MgZnO-based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40749
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu J.,Shan C. X.,Liu J. S.,et al. MgZnO avalanche photodetectors realized in Schottky structures[J]. Physica Status Solidi-Rapid Research Letters,2013,7(6).
APA	Yu J.,Shan C. X.,Liu J. S.,Zhang X. W.,Li B. H.,&Shen D. Z..(2013).MgZnO avalanche photodetectors realized in Schottky structures.Physica Status Solidi-Rapid Research Letters,7(6).
MLA	Yu J.,et al."MgZnO avalanche photodetectors realized in Schottky structures".Physica Status Solidi-Rapid Research Letters 7.6(2013).