Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets

	Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets
	Ma M. L.; Wu J.; Ning Y. Q.; Zhou F.; Yang M.; Zhang X.; Zhang J.; Shang G. Y.
	2013
发表期刊	Optics Express
ISSN	ISBN/1094-4087
卷号	21 期号:8
摘要	In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra. (C) 2013 Optical Society of America
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40741
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ma M. L.,Wu J.,Ning Y. Q.,et al. Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets[J]. Optics Express,2013,21(8).
APA	Ma M. L..,Wu J..,Ning Y. Q..,Zhou F..,Yang M..,...&Shang G. Y..(2013).Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets.Optics Express,21(8).
MLA	Ma M. L.,et al."Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets".Optics Express 21.8(2013).

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