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Low-voltage, high-mobility air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability
Hu Y.; Lu Q.; Li H.; Zhang N.; Liu X.
2013
发表期刊Applied Physics Express
ISSNISBN/18820778
卷号6期号:5
摘要High-performance air-stable ambipolar organic field-effect transistors (OFETs) working at low voltages are demonstrated. Pentacene/N,N'- ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) and polystyrene-modified anodized Al2O3 act as the active layer and dielectric layer, respectively. A voltage-dependent off-current state and different threshold voltage shift characteristics from that of unipolar OFETs are observed, which is of great importance in practical applications such as integrated circuits. The devices have hole and electron mobilities as high as 0.5 and 0.2cm2 V-1 s-1, respectively, with working voltages between -5 and 8 V, a high on/off ratio from 104 to 105, and a small thresholdvoltage shift. 2013 The Japan Society of Applied Physics.
收录类别SCI ; EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/40738
专题中科院长春光机所知识产出
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Hu Y.,Lu Q.,Li H.,et al. Low-voltage, high-mobility air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability[J]. Applied Physics Express,2013,6(5).
APA Hu Y.,Lu Q.,Li H.,Zhang N.,&Liu X..(2013).Low-voltage, high-mobility air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability.Applied Physics Express,6(5).
MLA Hu Y.,et al."Low-voltage, high-mobility air-stable ambipolar organic field-effect transistors with a voltage-dependent off-current state and modest operational stability".Applied Physics Express 6.5(2013).
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