High brightness light emitting diode based on single ZnO microwire

	High brightness light emitting diode based on single ZnO microwire
	Ding M.; Zhao D.; Yao B.; Zhao B.; Xu X.
	2013
发表期刊	Chemical Physics Letters
ISSN	ISBN/00092614
期号	577
摘要	The ZnO microwires were synthesized repetitively via chemical vapor deposition method. The high power light emitting diode based on the single ZnO microwire/p-GaN heterojunction was realized. A strong ultraviolet emission accompanied by a relatively weak defects-related emission was observed at room temperature photoluminescence spectra of single ZnO microwire. The I-V curve of the heterojunction diode showed obvious rectifying characteristics with a turn-on voltage of about 7 V. Under the forward injection current of 1.1 mA, the ultraviolet electroluminescence centered at 389 nm wavelength could be obtained based on the single ZnO microwire/p-GaN heterojunction diode. 2013 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40683
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ding M.,Zhao D.,Yao B.,et al. High brightness light emitting diode based on single ZnO microwire[J]. Chemical Physics Letters,2013(577).
APA	Ding M.,Zhao D.,Yao B.,Zhao B.,&Xu X..(2013).High brightness light emitting diode based on single ZnO microwire.Chemical Physics Letters(577).
MLA	Ding M.,et al."High brightness light emitting diode based on single ZnO microwire".Chemical Physics Letters .577(2013).

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