Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD

	Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD
	Miao G. Q.; Zhang T. M.; Zhang Z. W.; Jin Y. X.
	2013
发表期刊	Crystengcomm
ISSN	ISBN/1466-8033
卷号	15 期号:42
摘要	Extended spectral response InGaAs detectors have been grown, fabricated, and characterized for near-infrared detection. The atomic structure of the In0.82Ga0.18As/InP interface was investigated to determine the inhibition of mismatch defects of the two-step growth by TEM. The heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. Dark current of the detector under different temperatures was analyzed to determine the generating mechanism. Due to the presence of the InP window layer and In0.82Ga0.18As absorber layer in the heterostructure, the wavelength spectral response range of the detector is from 1 to 2.5 mu m.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40658
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Miao G. Q.,Zhang T. M.,Zhang Z. W.,et al. Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD[J]. Crystengcomm,2013,15(42).
APA	Miao G. Q.,Zhang T. M.,Zhang Z. W.,&Jin Y. X..(2013).Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD.Crystengcomm,15(42).
MLA	Miao G. Q.,et al."Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD".Crystengcomm 15.42(2013).

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