Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

	Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets
	Ma M. L.; Wu J.; Yang M.; Ning Y. Q.; Shang G. Y.
	2013
发表期刊	Acta Physica Sinica
ISSN	ISBN/1000-3290
卷号	62 期号:17
摘要	The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization (TE and TM) gain characteristics of continuously-operated 808 nm GaAs/AlGaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40651
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ma M. L.,Wu J.,Yang M.,et al. Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets[J]. Acta Physica Sinica,2013,62(17).
APA	Ma M. L.,Wu J.,Yang M.,Ning Y. Q.,&Shang G. Y..(2013).Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets.Acta Physica Sinica,62(17).
MLA	Ma M. L.,et al."Experimental characterization of polarization gain properties of 808 nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets".Acta Physica Sinica 62.17(2013).

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