Effect of compressive stress on doping efficiency of nitrogen in ZnO films

	Effect of compressive stress on doping efficiency of nitrogen in ZnO films
	Liu W. W.; Zhang Z. Z.; Yao B.; Shen D. Z.; Liu C. L.
	2013
发表期刊	Optical Materials
ISSN	ISBN/0925-3467
卷号	35 期号:12
摘要	Nitrogen (N)-doped ZnO films (ZnO:N) grown on the a-/c-plane sapphire substrates (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy were investigated. It was found that the content of N in the ZnO films grown on c-Al2O3 is higher than that of the films grown on a-Al2O3. The ZnO:N films grown on c-Al2O3 have lower carrier concentration and larger intensity ratio of the DAP/D degrees X emission compared with those of the ZnO:N films grown on a-Al2O3 under the same growth conditions, which indicates higher incorporation efficiency of N in the ZnO films grown on c-Al2O3. (C) 2013 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40623
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu W. W.,Zhang Z. Z.,Yao B.,et al. Effect of compressive stress on doping efficiency of nitrogen in ZnO films[J]. Optical Materials,2013,35(12).
APA	Liu W. W.,Zhang Z. Z.,Yao B.,Shen D. Z.,&Liu C. L..(2013).Effect of compressive stress on doping efficiency of nitrogen in ZnO films.Optical Materials,35(12).
MLA	Liu W. W.,et al."Effect of compressive stress on doping efficiency of nitrogen in ZnO films".Optical Materials 35.12(2013).