Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing

	Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
	Li J.; Yao B.; Li Y.; Ding Z.; Xu Y.; Zhang L.; Zhao H.; Shen D.
	2013
发表期刊	Journal of Applied Physics
ISSN	ISBN/00218979
卷号	113 期号:19
摘要	The effects of post-annealing on conductivity of phosphorus-doped ZnO (PZO) films grown at 500 C by radio frequency magnetron sputtering are investigated in a temperature ranging from 600 C to 900 C. The as-grown PZO exhibits n-type conductivity with an electron concentration of 1.19 1020 cm-3, and keeps n-type conductivity as annealed at 600 C-700 C but electron concentration decreases with increasing temperature. However, it converts to p-type conductivity as annealed at 800 C. Further increasing temperature, it still shows p-type conductivity but the hole concentration decreases. It is found that the P occupies mainly Zn site (PZn) in the as-grown PZO, which accounts for good n-type conductivity of the as-grown PZO. The amount of the PZn decreases with increasing temperature, while the amount of Zn vacancy (V Zn) increases from 600 C to 800 C but decreases greatly at 900 C, resulting in that the amount of PZn-2VZn complex increases with increasing temperature up to 800 C but decreases above 800 C. It is suggested that the PZn-2VZn complex acceptor is responsible for p-type conductivity, and that the conversion of conductivity is due to the change of the amount of the PZn and PZn-2VZn with annealing temperature. 2013 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40590
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li J.,Yao B.,Li Y.,et al. Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing[J]. Journal of Applied Physics,2013,113(19).
APA	Li J..,Yao B..,Li Y..,Ding Z..,Xu Y..,...&Shen D..(2013).Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing.Journal of Applied Physics,113(19).
MLA	Li J.,et al."Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing".Journal of Applied Physics 113.19(2013).

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