1.3-um In（Ga）as quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

	1.3-um In（Ga）as quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
	佟存柱
	2011-01-15
发表期刊	PTL
ISSN	1041-1135
卷号	23 期号:2 页码:91
收录类别	SCI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/4027
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	佟存柱. 1.3-um In（Ga）as quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process[J]. PTL,2011,23(2):91.
APA	佟存柱.(2011).1.3-um In（Ga）as quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process.PTL,23(2),91.
MLA	佟存柱."1.3-um In（Ga）as quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process".PTL 23.2(2011):91.