Design of active region for Watt-level VCSEL at 1060 nm

	Design of active region for Watt-level VCSEL at 1060 nm
	Zhang L.-S.; Ning Y.-Q.; Zeng Y.-G.; Zhang Y.; Qin L.; Liu Y.; Wang L.-J.; Cao J.-S.; Liang X.-M.
	2012
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	33 期号:7 页码:774-779
摘要	The active region of high power VCSEL at 1 060 nm is calculated and designed. The performances of highly-strained InGaAs quantum wells with GaAsP, GaAs and AlGaAs barriers are compared. A comprehensive model taking self-heating effect into consideration is presented to determine the parameters of quantum well and barrier. It is found that the best value of width and number of In0.28Ga0.72As quantum wells in our design is 9 nm and 3, respectively. And high output power up to Watt-level is achieved. In addition, the temperature performances are also compared among the three different barriers, which show that the devices with GaAsP barriers have higher output power and better temperature stability. Finally, the InGaAs/GaAsP QWs are grown used MOCVD and the PL spectrum is tested, the experimental data agrees with the theoretical results very well.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34593
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang L.-S.,Ning Y.-Q.,Zeng Y.-G.,et al. Design of active region for Watt-level VCSEL at 1060 nm[J]. Faguang Xuebao/Chinese Journal of Luminescence,2012,33(7):774-779.
APA	Zhang L.-S..,Ning Y.-Q..,Zeng Y.-G..,Zhang Y..,Qin L..,...&Liang X.-M..(2012).Design of active region for Watt-level VCSEL at 1060 nm.Faguang Xuebao/Chinese Journal of Luminescence,33(7),774-779.
MLA	Zhang L.-S.,et al."Design of active region for Watt-level VCSEL at 1060 nm".Faguang Xuebao/Chinese Journal of Luminescence 33.7(2012):774-779.