Up-conversion luminescence of highly Er3+-doped potassium ytterbium tungstate laser crystal

	Up-conversion luminescence of highly Er3+-doped potassium ytterbium tungstate laser crystal
	Zhang Y.; Liu J.; Li C.; Lin H.; Zeng F.; Tonelli M.
	2012
发表期刊	Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN	10072276
卷号	41 期号:9 页码:2322-2327
摘要	A highly Er3+-doped(10at.%) potassium ytterbium tungstate(Er3+:KYb(WO4)2, hereafter Er:KYbW) laser crystal was grown by the Kyropoulos method for the first time. The absorption and up-conversion emission spectra of Er:KYbW laser crystal were investigated at room temperature. Three obvious up- conversion emission bands were observed at the regions of 470-560, 645-675, 750-850 nm, and green up- conversion emission at 533 nm was much stronger. The mechanism of up-conversion emissions was discussed based on energy-matching principle. It was confirmed that two-photon process was involved in green and red up-conversion emissions. Based on Judd-Ofelt theory, the intensity parameters (=2,4,6) were: 2=16.34210-20 cm2, 4=4.18310-20 cm2, 6=1.26410-20 cm2. The calculated green up-conversion fluorescence branching ratios for 4S3/2-4I15/2 transition was 76.37%, and the radiative lifetime was 278 s. These optical parameters indicate that Er:KYbW is a highly efficient solid-state laser crystal for green up- conversion emission.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34574
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Y.,Liu J.,Li C.,et al. Up-conversion luminescence of highly Er3+-doped potassium ytterbium tungstate laser crystal[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2012,41(9):2322-2327.
APA	Zhang Y.,Liu J.,Li C.,Lin H.,Zeng F.,&Tonelli M..(2012).Up-conversion luminescence of highly Er3+-doped potassium ytterbium tungstate laser crystal.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,41(9),2322-2327.
MLA	Zhang Y.,et al."Up-conversion luminescence of highly Er3+-doped potassium ytterbium tungstate laser crystal".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 41.9(2012):2322-2327.