Substrate-removed semiconductor disk laser with 0.6 W output power

	Substrate-removed semiconductor disk laser with 0.6 W output power
	Zhang P.; Dai T.; Wu Y.; Ni Y.; Zhou Y.; Qin L.; Liang Y.; Fan S.
	2012
发表期刊	Chinese Optics Letters
ISSN	16717694
卷号	10 期号:SUPPL.1
摘要	A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1015 nm wavelength is reported. The semiconductor wafer is grown in reverse order: substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 m, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed. 2012 Chinese Optics Letter.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34572
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang P.,Dai T.,Wu Y.,et al. Substrate-removed semiconductor disk laser with 0.6 W output power[J]. Chinese Optics Letters,2012,10(SUPPL.1).
APA	Zhang P..,Dai T..,Wu Y..,Ni Y..,Zhou Y..,...&Fan S..(2012).Substrate-removed semiconductor disk laser with 0.6 W output power.Chinese Optics Letters,10(SUPPL.1).
MLA	Zhang P.,et al."Substrate-removed semiconductor disk laser with 0.6 W output power".Chinese Optics Letters 10.SUPPL.1(2012).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
bj01277145.pdf（619KB）			开放获取	--	浏览下载