Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB) | |
Chen L.; Wang B.; Zhang L.; Zhu D.; Li P.; Su Z.; Li B. | |
2012 | |
发表期刊 | Solid-State Electronics
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ISSN | 381101 |
卷号 | 69页码:67-71 |
摘要 | The photoluminescence (PL) and electroluminescence (EL) properties of a trimetallic dendritic europium (III) complex containing three metal cores as branching centers, tris(dibenzoylmethanato) (1,3,5-tris[2-(2-pyridyl) benzimidazoly]methyl-benzene)-europium (III) (Eu3(DBM) 9(TMMB)), have been investigated and reported. Red and white emissions have been acquired in the four EL devices of device A-D. Characteristic red emission peaking at 613 nm with four shoulder bands due to the 5D0 7Fj (j = 0-4) transitions of Eu3(DBM)9(TMMB) is observed in devices A-C. Device D with a simple non-doping device structure showed a white emission band. Also, the optical and the electrochemical properties of Eu 3(DBM)9(TMMB) have been characterized to possess a better understanding on the intramolecular energy transfer process. It is concluded that dendritic structure with three DBM ligands as "absorption antennas" facilitates the energy absorption and transportation of the complex. 2011 Elsevier Ltd. All rights reserved. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34557 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Chen L.,Wang B.,Zhang L.,et al. Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB)[J]. Solid-State Electronics,2012,69:67-71. |
APA | Chen L..,Wang B..,Zhang L..,Zhu D..,Li P..,...&Li B..(2012).Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB).Solid-State Electronics,69,67-71. |
MLA | Chen L.,et al."Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB)".Solid-State Electronics 69(2012):67-71. |
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