CIOMP OpenIR  > 中科院长春光机所知识产出
PICOSECOND OPTICAL BISTABILITY IN ZNSE-ZNTE/CAF2 MULTIPLE QUANTUM-WELLS AT ROOM-TEMPERATURE
Shen D. Z.; Fan X. W.; Piao Z. S.; Fan G. H.
1992
发表期刊Journal of Crystal Growth
ISSN0022-0248
卷号117期号:1-4页码:519-522
摘要We present the first observation of room-temperature picosecond optical bistability in ZnSe-ZnTe multiple quantum wells (MQWs) grown by metalorganic chemical vapour deposition (MOCVD) on transparent CaF2(111) substrates. On the basis of the direction of the hysteresis loop, the absorption and the energy band structure in ZnSe-ZnTe MQWs, we show that the nonlinear mechanism for the optical bistability of ZnSe-ZnTe MQWs is due to the effect of increasing absorption, which is ascribed to the band gap shrinkage of ZnSe-ZnTe MQWs due to the high density of electrons and holes in the MQWs. The ps switching time can be explained by the electrons excited to the conduction band of ZnTe layer in ZnSe-ZnTe MQWs relaxing quickly to the conduction band of ZnSe layer in this material system.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/34530
专题中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Shen D. Z.,Fan X. W.,Piao Z. S.,et al. PICOSECOND OPTICAL BISTABILITY IN ZNSE-ZNTE/CAF2 MULTIPLE QUANTUM-WELLS AT ROOM-TEMPERATURE[J]. Journal of Crystal Growth,1992,117(1-4):519-522.
APA Shen D. Z.,Fan X. W.,Piao Z. S.,&Fan G. H..(1992).PICOSECOND OPTICAL BISTABILITY IN ZNSE-ZNTE/CAF2 MULTIPLE QUANTUM-WELLS AT ROOM-TEMPERATURE.Journal of Crystal Growth,117(1-4),519-522.
MLA Shen D. Z.,et al."PICOSECOND OPTICAL BISTABILITY IN ZNSE-ZNTE/CAF2 MULTIPLE QUANTUM-WELLS AT ROOM-TEMPERATURE".Journal of Crystal Growth 117.1-4(1992):519-522.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
bj01280145.pdf(1114KB) 开放获取--浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Shen D. Z.]的文章
[Fan X. W.]的文章
[Piao Z. S.]的文章
百度学术
百度学术中相似的文章
[Shen D. Z.]的文章
[Fan X. W.]的文章
[Piao Z. S.]的文章
必应学术
必应学术中相似的文章
[Shen D. Z.]的文章
[Fan X. W.]的文章
[Piao Z. S.]的文章
相关权益政策
暂无数据
收藏/分享
文件名: bj01280145.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。