EXCITONIC OPTICAL BISTABILITY OF ZNSE-ZNS/GAAS MQWS ON REFLECTION AT ROOM-TEMPERATURE

	EXCITONIC OPTICAL BISTABILITY OF ZNSE-ZNS/GAAS MQWS ON REFLECTION AT ROOM-TEMPERATURE
	Shen D. Z.; Fan X. W.; Yang B. J.; Chen L. C.; Yu J. Q.
	1994
发表期刊	Journal of Luminescence
ISSN	0022-2313
页码	630-632
摘要	We present the first observation of room-temperature nanosecond excitonic optical bistability on reflection in ZnSe-ZnS/GaAs multiple quantum wells, in which the switching intensity and contrast ratio for the optical bistability are about 0.6 MW/cm2 and 7:1. The research results indicate that the nonlinear mechanism for the optical bistability is due to the excitonic saturating absorption effect.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34529
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shen D. Z.,Fan X. W.,Yang B. J.,et al. EXCITONIC OPTICAL BISTABILITY OF ZNSE-ZNS/GAAS MQWS ON REFLECTION AT ROOM-TEMPERATURE[J]. Journal of Luminescence,1994:630-632.
APA	Shen D. Z.,Fan X. W.,Yang B. J.,Chen L. C.,&Yu J. Q..(1994).EXCITONIC OPTICAL BISTABILITY OF ZNSE-ZNS/GAAS MQWS ON REFLECTION AT ROOM-TEMPERATURE.Journal of Luminescence,630-632.
MLA	Shen D. Z.,et al."EXCITONIC OPTICAL BISTABILITY OF ZNSE-ZNS/GAAS MQWS ON REFLECTION AT ROOM-TEMPERATURE".Journal of Luminescence (1994):630-632.