Below band-gap nonlinear optical properties of semiconductor-doped glasses

	Below band-gap nonlinear optical properties of semiconductor-doped glasses
	Banfi G. P.; Degiorgio V.; Fortusini D.; Tan H. M.
	1996
发表期刊	Journal of Nonlinear Optical Physics & Materials
ISSN	0218-8635
卷号	5 期号:2 页码:205-222
摘要	Through nonlinear transmission and wave-mixing measurements, combined with structural data from neutron scattering, we obtain the below band-gap third-order susceptibility chi((3)) (both imaginary and real part) and the refractive-index-change per carrier of semiconductor nanocrystals embedded in a glass matrix. Our data covers a range of crystal radii between 2 and 14 nm and a range of ratios y = E(g)/(<(h)over bar omega>), where E(g) is the energy gap of the semiconductor and <(h)over bar omega> is the energy of the incident photon, between 1.1 and 1.9. The magnitude of chi((3)) and its dependence on y are comparable to those of related bulk semiconductors.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34492
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Banfi G. P.,Degiorgio V.,Fortusini D.,et al. Below band-gap nonlinear optical properties of semiconductor-doped glasses[J]. Journal of Nonlinear Optical Physics & Materials,1996,5(2):205-222.
APA	Banfi G. P.,Degiorgio V.,Fortusini D.,&Tan H. M..(1996).Below band-gap nonlinear optical properties of semiconductor-doped glasses.Journal of Nonlinear Optical Physics & Materials,5(2),205-222.
MLA	Banfi G. P.,et al."Below band-gap nonlinear optical properties of semiconductor-doped glasses".Journal of Nonlinear Optical Physics & Materials 5.2(1996):205-222.

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