PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION

	PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION
	Muller M.; Tian H.; Becker U.; Grun M.; Klingshirn C.
	1991
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	199 期号:1 页码:95-106
摘要	Thin films of CdS and related materials were grown by thermal evaporation, by electron beam evaporation and by hot wall epitaxy onto various substrates. In the case of evaporation it was necessary to anneal the films after growth, in contrast to the epitaxy. Simultaneous evaporation of two semiconductor materials leads to ternary films with an absorption edge depending on the composition. Alternating evaporation of two materials leads to multilayer heterostructures demonstrating new effects. Absorption and luminescence measurements have been used for optical characterization. Some non-linear optical measurements are also presented concerning mainly photothermally induced optical bistability.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34478
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Muller M.,Tian H.,Becker U.,et al. PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION[J]. Thin Solid Films,1991,199(1):95-106.
APA	Muller M.,Tian H.,Becker U.,Grun M.,&Klingshirn C..(1991).PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION.Thin Solid Films,199(1),95-106.
MLA	Muller M.,et al."PREPARATION OF SOME II-VI SEMICONDUCTOR-FILMS BY THERMAL OR ELECTRON-BEAM EVAPORATION AND BY HOT WALL EPITAXY AND THEIR OPTICAL CHARACTERIZATION".Thin Solid Films 199.1(1991):95-106.

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