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LIGHT INTERFERENCE EFFECT IN OPTICAL BISTABILITY OF MULTIPLE-QUANTUM-WELL ETALONS
Shen D. Z.; Fan X. W.; Yang B. J.
1994
发表期刊Journal of Crystal Growth
ISSN0022-0248
卷号138期号:1-4页码:625-628
摘要The light interference effect in optical bistability of multiple quantum well (MQW) etalons has been studied by a simplified formula according to the light propagating theories in multiple layers medium. On the basis of the formula, the analyzed results show that the light interference effect in the MQW can directly affect the threshold of the optical bistability of the MQW etalons, particularly in the case of large periodic number and large reflectivity in interfaces between the well and barrier layers of the MQW etalons. The optical bistabilities in the CdZnSe-ZnSe and ZnSe-ZnTe MQW etalons have been measured and compared with the analyzed results; the experimental results further indicate that the large reflectivity in the interface between the well and barrier layers of the MQW will cause the threshold of the optical bistability in the MQW etalons to increase due to the light interference effect in the MQW etalons.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/34433
专题中科院长春光机所知识产出
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Shen D. Z.,Fan X. W.,Yang B. J.. LIGHT INTERFERENCE EFFECT IN OPTICAL BISTABILITY OF MULTIPLE-QUANTUM-WELL ETALONS[J]. Journal of Crystal Growth,1994,138(1-4):625-628.
APA Shen D. Z.,Fan X. W.,&Yang B. J..(1994).LIGHT INTERFERENCE EFFECT IN OPTICAL BISTABILITY OF MULTIPLE-QUANTUM-WELL ETALONS.Journal of Crystal Growth,138(1-4),625-628.
MLA Shen D. Z.,et al."LIGHT INTERFERENCE EFFECT IN OPTICAL BISTABILITY OF MULTIPLE-QUANTUM-WELL ETALONS".Journal of Crystal Growth 138.1-4(1994):625-628.
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