Crystal perfection in GaP films heteroepitaxially grown on GaAs by low-pressure metalorganic chemical vapor deposition

	Crystal perfection in GaP films heteroepitaxially grown on GaAs by low-pressure metalorganic chemical vapor deposition
	Zhang Z. C.; Pan J. Q.; Cui D. L.; Kong X. G.; Qin X. Y.; Huang B. B.; Jiang M. H.
	2000
发表期刊	Rare Metals
ISSN	1001-0521
卷号	19 期号:2 页码:87-90
摘要	The crystal perfection in GaP epitaxial layers was stuided by the use of double crystal X-ray diffraction, backscattering spectrometry and Raman scattering techniques. GaP films grown on Galls by low-pressure metalorganic chemical vapor deposition were used as the samples. By means of the morphology and the full-width at half maximum of X-ray diffraction peak for the Gap epilayers,the growth temperature and V / III ratio were optimized. In addition,the residual stress and strain of a GaP epilayer were calculated,based on Raman scattering measurement.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34412
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. C.,Pan J. Q.,Cui D. L.,et al. Crystal perfection in GaP films heteroepitaxially grown on GaAs by low-pressure metalorganic chemical vapor deposition[J]. Rare Metals,2000,19(2):87-90.
APA	Zhang Z. C..,Pan J. Q..,Cui D. L..,Kong X. G..,Qin X. Y..,...&Jiang M. H..(2000).Crystal perfection in GaP films heteroepitaxially grown on GaAs by low-pressure metalorganic chemical vapor deposition.Rare Metals,19(2),87-90.
MLA	Zhang Z. C.,et al."Crystal perfection in GaP films heteroepitaxially grown on GaAs by low-pressure metalorganic chemical vapor deposition".Rare Metals 19.2(2000):87-90.

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