SURFACE PROCESS AND LATTICE-RELAXATION IN GROWTH OF ZNSXSE1-X EPILAYERS ON GAAS SUBSTRATE BY VPE

	SURFACE PROCESS AND LATTICE-RELAXATION IN GROWTH OF ZNSXSE1-X EPILAYERS ON GAAS SUBSTRATE BY VPE
	Zhang J. H.; Fan X. W.
	1992
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	121 期号:4 页码:769-774
摘要	Successful vapour phase epitaxial (VPE) growth of ZnSxSe1-x on (100) GaAs substrate is reported. The solid composition x can be controlled by varying the substrate temperature. This result is discussed in terms of adsorption and desorption processes at the vapour-solid interface. An activation energy of E = 24.3 kcal/mol is decuced for the S/Se mixture in the solid. The effect of lattice relaxation is investigated. The perpendicular relative mismatch (DELTA-a(perpendicular-to) / a) is measured and a maximum value of -6 X 10(-3) is found for x > 0.2. The emission from exciton-exciton interaction was observed in ZnSxSe1-x (x = 0.1, 0.2) epilayers at 77 K for the first time. It indicates that high quality ZnSxSe1-x epilayers have been grown by VPE method.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34403
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang J. H.,Fan X. W.. SURFACE PROCESS AND LATTICE-RELAXATION IN GROWTH OF ZNSXSE1-X EPILAYERS ON GAAS SUBSTRATE BY VPE[J]. Journal of Crystal Growth,1992,121(4):769-774.
APA	Zhang J. H.,&Fan X. W..(1992).SURFACE PROCESS AND LATTICE-RELAXATION IN GROWTH OF ZNSXSE1-X EPILAYERS ON GAAS SUBSTRATE BY VPE.Journal of Crystal Growth,121(4),769-774.
MLA	Zhang J. H.,et al."SURFACE PROCESS AND LATTICE-RELAXATION IN GROWTH OF ZNSXSE1-X EPILAYERS ON GAAS SUBSTRATE BY VPE".Journal of Crystal Growth 121.4(1992):769-774.

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