Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire

	Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire
	Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2008
发表期刊	Journal of the Korean Physical Society
ISSN	0374-4884
卷号	53 期号:5 页码:3038-3042
摘要	Nitrogen-doped p-type ZnO thin films were grown on c-plane sapphire (Al2O3) substrates by plasma-assistant molecular beam epitaxy, where O-2 and N-2 were introduced via a RF plasma source simultaneously. In situ optical emission spectra of the plasma were employed to monitor the chemical species in the active gas sources, one of the most important growth parameters. By adjusting the growth parameters, we confirm the optimal condition for p-type doping growth. The reproducible p-type ZnO thin films have the hole concentration (N-A - N-D) up to 1.0 x 10(18) cm(-3) and the resistivity of 6 Omega cm. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. Electroluminescence spectra centered about 430 nm were obtained even at 350 K.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34372
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Lu Y. M.,Shen D. Z.,et al. Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire[J]. Journal of the Korean Physical Society,2008,53(5):3038-3042.
APA	Wei Z. P..,Lu Y. M..,Shen D. Z..,Zhang Z. Z..,Yao B..,...&Tang Z. K..(2008).Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire.Journal of the Korean Physical Society,53(5),3038-3042.
MLA	Wei Z. P.,et al."Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire".Journal of the Korean Physical Society 53.5(2008):3038-3042.

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