DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS

	DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS
	Hauksson I. S.; Wang S. Y.; Simpson J.; Taghizadeh M. R.; Prior K. A.; Cavenett B. C.
	1993
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	191 期号:1-2 页码:124-129
摘要	In this paper, we report the growth and characterization of Ii-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine from an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (V(Se)-Zn-N(Se)) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34345
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hauksson I. S.,Wang S. Y.,Simpson J.,et al. DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS[J]. Physica B-Condensed Matter,1993,191(1-2):124-129.
APA	Hauksson I. S.,Wang S. Y.,Simpson J.,Taghizadeh M. R.,Prior K. A.,&Cavenett B. C..(1993).DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS.Physica B-Condensed Matter,191(1-2),124-129.
MLA	Hauksson I. S.,et al."DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS".Physica B-Condensed Matter 191.1-2(1993):124-129.

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