HIGH-POWER DIFFRACTION-LIMITED PHASE-LOCKED GAAS/GAALAS SEMICONDUCTOR-LASER ARRAY

	HIGH-POWER DIFFRACTION-LIMITED PHASE-LOCKED GAAS/GAALAS SEMICONDUCTOR-LASER ARRAY
	Zhang X. T.; Zhang Y. C.; Piao Y. Z.; Li D. E.; Wu S. L.; Du S. Q.
	1990
发表期刊	Fiber and Integrated Optics
ISSN	0146-8030
卷号	9 期号:3 页码:219-223
摘要	High-power diffraction-limited phase-locked gallium-arsenide (GaAs)/gallium-aluminum-arsenide (GaAlAs) semiconductor laser arrays have been fabricated using the LPE technique, the standard photolithographic technique, wet etching, and proton bombardment. The tailored gain-guided arrays are made by varying the width of the channels of the lasers while keeping the spacing between them constant. The array consists of six lasers. Its optical output power per facet is 300 mW at 2.7 I(th) with single-mode continuous wave (CW) operation and single lobe far-field pattern with full width at half maximum (FWHM) of 1.9-degrees.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1990FD75600002
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34323
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X. T.,Zhang Y. C.,Piao Y. Z.,et al. HIGH-POWER DIFFRACTION-LIMITED PHASE-LOCKED GAAS/GAALAS SEMICONDUCTOR-LASER ARRAY[J]. Fiber and Integrated Optics,1990,9(3):219-223.
APA	Zhang X. T.,Zhang Y. C.,Piao Y. Z.,Li D. E.,Wu S. L.,&Du S. Q..(1990).HIGH-POWER DIFFRACTION-LIMITED PHASE-LOCKED GAAS/GAALAS SEMICONDUCTOR-LASER ARRAY.Fiber and Integrated Optics,9(3),219-223.
MLA	Zhang X. T.,et al."HIGH-POWER DIFFRACTION-LIMITED PHASE-LOCKED GAAS/GAALAS SEMICONDUCTOR-LASER ARRAY".Fiber and Integrated Optics 9.3(1990):219-223.

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