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GROWTH OF HIGH-QUALITY ZNSE EPITAXIAL LAYERS ON TRANSPARENT SUBSTRATES CAF2 BY ATMOSPHERIC-PRESSURE METALLOORGANIC CHEMICAL VAPOR-DEPOSITION
Guan Z. P.; Fan G. H.; Song S. H.; Fan X. W.
1992
发表期刊Thin Solid Films
ISSN0040-6090
卷号217期号:1-2页码:98-101
摘要High quality ZnSe epitaxial layers (epilayers) on CaF2(111) transparent substrate have been successfully fabricated for the first time by atmospheric pressure metallo-organic chemical vapour deposition, using dimethylzinc and H2Se as sources. The double-crystal X-ray diffraction pattern (111) shows a little shift of ZnSe diffraction peak towards a small diffraction angle, and the full width at half-maximum of the diffraction peak value from its (111) face is about 0.20-degrees. The optical and electrical characteristics of ZnSe epilayers were measured by photoluminescence, scanning electron microscopy and the Van Der Pauw method, the epilayers exhibit a high crystallographic quality and reveal an even mirror surface. All epilayers have high resistivities of up to 10(7) OMEGA cm. From the analyses on the energy shift of the luminescence line, a compressive stress has been found in the epilayer sides of these heterostructures. This is consistent with the stresses predicted for a lattice mismatch between the ZnSe epilayer and the CaF, substrate.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/34321
专题中科院长春光机所知识产出
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Guan Z. P.,Fan G. H.,Song S. H.,et al. GROWTH OF HIGH-QUALITY ZNSE EPITAXIAL LAYERS ON TRANSPARENT SUBSTRATES CAF2 BY ATMOSPHERIC-PRESSURE METALLOORGANIC CHEMICAL VAPOR-DEPOSITION[J]. Thin Solid Films,1992,217(1-2):98-101.
APA Guan Z. P.,Fan G. H.,Song S. H.,&Fan X. W..(1992).GROWTH OF HIGH-QUALITY ZNSE EPITAXIAL LAYERS ON TRANSPARENT SUBSTRATES CAF2 BY ATMOSPHERIC-PRESSURE METALLOORGANIC CHEMICAL VAPOR-DEPOSITION.Thin Solid Films,217(1-2),98-101.
MLA Guan Z. P.,et al."GROWTH OF HIGH-QUALITY ZNSE EPITAXIAL LAYERS ON TRANSPARENT SUBSTRATES CAF2 BY ATMOSPHERIC-PRESSURE METALLOORGANIC CHEMICAL VAPOR-DEPOSITION".Thin Solid Films 217.1-2(1992):98-101.
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