Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer

	Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer
	Yang D. C.; Liang H. W.; Song S. W.; Liu Y.; Shen R. S.; Luo Y. M.; Zhao H. F.; Du G. T.
	2012
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	29 期号:8
摘要	GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiNx growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer. The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.
收录类别	SCI
语种	英语
WOS记录号	WOS:000307667100068
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34317
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang D. C.,Liang H. W.,Song S. W.,et al. Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer[J]. Chinese Physics Letters,2012,29(8).
APA	Yang D. C..,Liang H. W..,Song S. W..,Liu Y..,Shen R. S..,...&Du G. T..(2012).Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer.Chinese Physics Letters,29(8).
MLA	Yang D. C.,et al."Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer".Chinese Physics Letters 29.8(2012).