TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

	TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
	Zhao J. L.; Gao Y.; Gu T. G.; Sutton M.; Liang J. C.
	1993
发表期刊	Journal of Materials Science Letters
ISSN	0261-8028
卷号	12 期号:1 页码:53-55
收录类别	SCI
语种	英语
WOS记录号	WOS:A1993KM81800018
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34171
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao J. L.,Gao Y.,Gu T. G.,et al. TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION[J]. Journal of Materials Science Letters,1993,12(1):53-55.
APA	Zhao J. L.,Gao Y.,Gu T. G.,Sutton M.,&Liang J. C..(1993).TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION.Journal of Materials Science Letters,12(1),53-55.
MLA	Zhao J. L.,et al."TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION".Journal of Materials Science Letters 12.1(1993):53-55.