SHIFT OF THE EXCITONIC RESONANCES BY THERMAL STRAIN AND LATTICE MISMATCH IN CDS THIN EPITAXIAL LAYERS

	SHIFT OF THE EXCITONIC RESONANCES BY THERMAL STRAIN AND LATTICE MISMATCH IN CDS THIN EPITAXIAL LAYERS
	Becker U.; Giessen H.; Zhou F.; Gilsdorf T.; Loidolt J.; Muller M.; Grun M.; Klingshirn C.
	1992
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	125 期号:1-2 页码:384-387
摘要	CdS was grown on BaF2 and SrF2 by hot wall epitaxy and on BaF2 by pulsed laser evaporation. Reflection measurements on the epitaxial layers showed energy shifts of A- and B-excitons. The shift on the surface of the film is different from that on the interface side. Calculations of the shift using known data of the deformation potentials confirmed the experimental results. We give here an explanation of these results taking into account thermal strain on the surface side and additional mismatch strain on the interface side.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34135
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Becker U.,Giessen H.,Zhou F.,et al. SHIFT OF THE EXCITONIC RESONANCES BY THERMAL STRAIN AND LATTICE MISMATCH IN CDS THIN EPITAXIAL LAYERS[J]. Journal of Crystal Growth,1992,125(1-2):384-387.
APA	Becker U..,Giessen H..,Zhou F..,Gilsdorf T..,Loidolt J..,...&Klingshirn C..(1992).SHIFT OF THE EXCITONIC RESONANCES BY THERMAL STRAIN AND LATTICE MISMATCH IN CDS THIN EPITAXIAL LAYERS.Journal of Crystal Growth,125(1-2),384-387.
MLA	Becker U.,et al."SHIFT OF THE EXCITONIC RESONANCES BY THERMAL STRAIN AND LATTICE MISMATCH IN CDS THIN EPITAXIAL LAYERS".Journal of Crystal Growth 125.1-2(1992):384-387.

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