High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films

	High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
其他题名	论文其他题名
	Zhang X. T.; Liu Y. C.; Zhi Z. Z.; Zhang J. Y.; Lu Y. M.; Xu W.; Shen D. Z.; Zhong G. Z.; Fan X. W.; Kong X. G.
	2002
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	240 期号:3—4 页码:463-466
摘要	High quality zinc oxide (ZnO) films were obtained by thermal oxidation of high quality ZnS films. The ZnS films were deposited on a Si substrate by a low-pressure metalorganic chemical vapor deposition technique. X-ray diffraction spectra indicate that high quality ZnO films possessing a polycrystalline hexagonal wurtzite structure with preferred orientation of (0 0 2) were obtained. A fourth order LO Raman scattering was observed in the films. In photoluminescence (PL) measurements, a strong PL with a full-width at half-maximum of 10 nm around 380 nm was obtained for the samples annealed at 900degreesC at room temperature. The maximum PL intensity ratio of the UV emission to the deep-level emission is 28 at room temperature, providing evidence of the high quality of the nanocrystalline ZnO films. (C) 2002 Published by Elsevier Science B.V.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26852
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X. T.,Liu Y. C.,Zhi Z. Z.,et al. High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films[J]. Journal of Crystal Growth,2002,240(3—4):463-466.
APA	Zhang X. T..,Liu Y. C..,Zhi Z. Z..,Zhang J. Y..,Lu Y. M..,...&Kong X. G..(2002).High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films.Journal of Crystal Growth,240(3—4),463-466.
MLA	Zhang X. T.,et al."High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films".Journal of Crystal Growth 240.3—4(2002):463-466.

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