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High quality ZnO thin films grown by plasma enhanced chemical vapor deposition
其他题名论文其他题名
Li B. S.; Liu Y. C.; Chu Z. S.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Fan X. W.
2002
发表期刊Journal of Applied Physics
ISSN0021-8979
卷号91期号:1页码:501-505
摘要High quality ZnO thin films have been grown on a Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C(2)H(5))(2)] and carbon dioxide (CO(2)) gas mixtures at the low temperature of 180 degreesC. The dependence of ZnO thin film quality on the gas flow rate ratio of Zn(C(2)H(5))(2) to CO(2) (GFRRZC) is studied by using x-ray diffraction (XRD), optical absorption (OA) spectra, and cathodoluminescence (CL) spectra. High quality ZnO thin films with a c-axis-oriented wurtzite structure are obtained when the GFRRZC is 0.33. XRD shows that the full width at half maximum of (0002) ZnO located at 34.42 degrees is about 0.2 degrees. At room temperature, a pronounced free exciton absorption peak around 365 nm is clearly observed. Also, a strong free exciton emission without deep level defect emission is observed around 385 nm, and its temperature dependence is studied from the photoluminescence spectra. These observations indicate the formation of a high quality ZnO film. Additionally, nitridation of the Si surface caused by releasing NH(3) plasma into the deposition chamber is an effective way to improve film quality. (C) 2002 American Institute of Physics.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26850
专题中科院长春光机所知识产出
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Li B. S.,Liu Y. C.,Chu Z. S.,et al. High quality ZnO thin films grown by plasma enhanced chemical vapor deposition[J]. Journal of Applied Physics,2002,91(1):501-505.
APA Li B. S..,Liu Y. C..,Chu Z. S..,Shen D. Z..,Lu Y. M..,...&Fan X. W..(2002).High quality ZnO thin films grown by plasma enhanced chemical vapor deposition.Journal of Applied Physics,91(1),501-505.
MLA Li B. S.,et al."High quality ZnO thin films grown by plasma enhanced chemical vapor deposition".Journal of Applied Physics 91.1(2002):501-505.
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