The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica

	The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica
其他题名	论文其他题名
	Liu Y. X.; Liu Y. C.; Shen D. Z.; Zhong G. Z.; Fan X. W.; Kong X. G.; Mu R.; Henderson D. O.
	2002
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	240 期号:1—2 页码:152-156
摘要	High-quality ZnO films have been prepared by using zinc ion implantation into silica followed by post-thermal annealing in oxygen at 700degreesC for varying lengths of time. The dependence of the structure and photoluminescence of ZnO films on the annealing time has been investigated using X-ray diffraction and photoluminescence spectra. The X-ray photoelectron spectra were used to investigate the ZnO film formation process. As the annealing time increased to 2 h. ZnO film exhibited (0 0 2)-preferred orientation and an intense UV emission with a full width of 11 nm (96 meV) at half maximum positioned at approximate to377 nm (3.29 eV) at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26849
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu Y. X.,Liu Y. C.,Shen D. Z.,et al. The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica[J]. Journal of Crystal Growth,2002,240(1—2):152-156.
APA	Liu Y. X..,Liu Y. C..,Shen D. Z..,Zhong G. Z..,Fan X. W..,...&Henderson D. O..(2002).The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica.Journal of Crystal Growth,240(1—2),152-156.
MLA	Liu Y. X.,et al."The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica".Journal of Crystal Growth 240.1—2(2002):152-156.

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