Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

	Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes
其他题名	论文其他题名
	Yuan J. F.; Zhang J.; Wang J.; Yan X. J.; Yan D. H.; Xu W.
	2003
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	82 期号:22 页码:3967-3969
摘要	An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices. (C) 2003 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26837
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yuan J. F.,Zhang J.,Wang J.,et al. Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes[J]. Applied Physics Letters,2003,82(22):3967-3969.
APA	Yuan J. F.,Zhang J.,Wang J.,Yan X. J.,Yan D. H.,&Xu W..(2003).Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes.Applied Physics Letters,82(22),3967-3969.
MLA	Yuan J. F.,et al."Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes".Applied Physics Letters 82.22(2003):3967-3969.

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