Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

	Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots
其他题名	论文其他题名
	Jin H.; Zhang L. G.; Zheng Z. H.; Kong X. G.; Shen D. Z.
	2004
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	130 期号:10 页码:653-655
摘要	Exciton tunnelling through a ZnSe barrier layer of various thicknesses is investigated in a Zn0.72Cd0.28Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence (PL) spectra and near resonant pump-probe technique. Fast exciton tunnelling from quantum well to quantum dots is observed by transient differential transmission. The tunnelling time is 1.8, 4.4 and 39 ps for barrier thickness of 10, 15 and 20 nm, respectively. (C) 2004 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26828
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jin H.,Zhang L. G.,Zheng Z. H.,et al. Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots[J]. Solid State Communications,2004,130(10):653-655.
APA	Jin H.,Zhang L. G.,Zheng Z. H.,Kong X. G.,&Shen D. Z..(2004).Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots.Solid State Communications,130(10),653-655.
MLA	Jin H.,et al."Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots".Solid State Communications 130.10(2004):653-655.