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Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires
其他题名论文其他题名
Meng X. Q.; Shen D. Z.; Zhang J. Y.; Zhao D. X.; Dong L.; Lu Y. M.; Liu Y. C.; Fan X. W.
2005
发表期刊Nanotechnology
ISSN0957-4484
卷号16期号:4页码:609-612
摘要Catalyst-free needle-like ZnO nanowires have been grown on Si(111) substrate at 430° C via a simple solid-vapour process. The obtained nanowires are found to have a uniform size distribution with sharp tips. The lengths of the nanowires range from 2.8 to 3.2 μ m with diameters of about 100 nm for the root and 30 nm for the tip parts. The x-ray diffraction (XRD) result shows the nanowires are c-axis preferentially oriented. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analysis reveal that every single nanowire is a well developed single crystal. The room temperature photoluminescence (PL) spectrum shows a dominant near-band-edge emission peak. The near-band-edge emission is further identified to originate from the radiative free exciton recombination by the temperature-dependent PL.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26810
专题中科院长春光机所知识产出
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GB/T 7714
Meng X. Q.,Shen D. Z.,Zhang J. Y.,et al. Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires[J]. Nanotechnology,2005,16(4):609-612.
APA Meng X. Q..,Shen D. Z..,Zhang J. Y..,Zhao D. X..,Dong L..,...&Fan X. W..(2005).Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires.Nanotechnology,16(4),609-612.
MLA Meng X. Q.,et al."Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires".Nanotechnology 16.4(2005):609-612.
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