F-doping effects on electrical and optical properties of ZnO nanocrystalline films

	F-doping effects on electrical and optical properties of ZnO nanocrystalline films
其他题名	论文其他题名
	Xu H. Y.; Liu Y. C.; Mu R.; Shao C. L.; Lu Y. M.; Shen D. Z.; Fan X. W.
	2005
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	86 期号:12
摘要	F-doped and undoped ZnO nanocrystalline films were prepared from thermal oxidation of ZnF2 films deposited on a silica substrate by electron beam evaporation. The F-doped ZnO film has very low electrical resistivity of 7.95x10(-4) Omega cm and a high optical transmittance. The study also indicated that (1) the substitutional F atoms in the film serve as donors to increase the carrier concentration and the optical band gap with respect to undoped ZnO film, and (2) F passivation reduces the known number of O-s(2-)/O-s(-) surface states and increases carrier mobility. (C) 2005 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26805
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu H. Y.,Liu Y. C.,Mu R.,et al. F-doping effects on electrical and optical properties of ZnO nanocrystalline films[J]. Applied Physics Letters,2005,86(12).
APA	Xu H. Y..,Liu Y. C..,Mu R..,Shao C. L..,Lu Y. M..,...&Fan X. W..(2005).F-doping effects on electrical and optical properties of ZnO nanocrystalline films.Applied Physics Letters,86(12).
MLA	Xu H. Y.,et al."F-doping effects on electrical and optical properties of ZnO nanocrystalline films".Applied Physics Letters 86.12(2005).

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