Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes | |
其他题名 | 论文其他题名 |
Xu H. Y.; Liu Y. C.; Liu Y. X.; Xu C. S.; Shao C. L.; Mu R. | |
2005 | |
发表期刊 | Applied Physics B-Lasers and Optics |
ISSN | 0946-2171 |
卷号 | 80期号:7页码:871-874 |
摘要 | In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The current-voltage characteristic of the obtained p-i-n heterojunction exhibited a diode-like rectifying behavior. Because the electrons from n-ZnO and the holes from p-GaN could be injected into a i-ZnO layer with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in i-ZnO region. As a result, an ultraviolet electro-emission at 3.21 eV, related to ZnO exciton recombination, was observed in a room-temperature electroluminescence spectrum of p-i-n heterojunction under forward bias. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26798 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Xu H. Y.,Liu Y. C.,Liu Y. X.,et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes[J]. Applied Physics B-Lasers and Optics,2005,80(7):871-874. |
APA | Xu H. Y.,Liu Y. C.,Liu Y. X.,Xu C. S.,Shao C. L.,&Mu R..(2005).Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes.Applied Physics B-Lasers and Optics,80(7),871-874. |
MLA | Xu H. Y.,et al."Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes".Applied Physics B-Lasers and Optics 80.7(2005):871-874. |
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