Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes

	Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes
其他题名	论文其他题名
	Xu H. Y.; Liu Y. C.; Liu Y. X.; Xu C. S.; Shao C. L.; Mu R.
	2005
发表期刊	Applied Physics B-Lasers and Optics
ISSN	0946-2171
卷号	80 期号:7 页码:871-874
摘要	In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The current-voltage characteristic of the obtained p-i-n heterojunction exhibited a diode-like rectifying behavior. Because the electrons from n-ZnO and the holes from p-GaN could be injected into a i-ZnO layer with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in i-ZnO region. As a result, an ultraviolet electro-emission at 3.21 eV, related to ZnO exciton recombination, was observed in a room-temperature electroluminescence spectrum of p-i-n heterojunction under forward bias.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26798
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu H. Y.,Liu Y. C.,Liu Y. X.,et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes[J]. Applied Physics B-Lasers and Optics,2005,80(7):871-874.
APA	Xu H. Y.,Liu Y. C.,Liu Y. X.,Xu C. S.,Shao C. L.,&Mu R..(2005).Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes.Applied Physics B-Lasers and Optics,80(7),871-874.
MLA	Xu H. Y.,et al."Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes".Applied Physics B-Lasers and Optics 80.7(2005):871-874.

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