Changchun Institute of Optics,Fine Mechanics and Physics,CAS
P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO | |
其他题名 | 论文其他题名 |
Liang H. W.; Lu Y. M.; Shen D. Z.; Liu Y. C.; Yan J. F.; Shan C. X.; Li B. H.; Zhang Z. Z.; Zhang J. Y.; Fan X. W. | |
2005 | |
发表期刊 | Physica Status Solidi a-Applications and Materials Science
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ISSN | 0031-8965 |
卷号 | 202期号:6页码:1060-1065 |
摘要 | N-doped p-type Zno thin films were grown by plasma molecular beam epitaxy (P-MBE) on c-plane sapphire (Al2O3) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (N-A - N-D) of 1.2 x 10(18) cm(-3) and minimum resistivity or 9,36 Omega cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X-ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p-type ZnO thin films are dominated by the emission from donor-acceptor pair recombination. The formation mechanism of p-type ZnO is explained by the optical emission spectra of radical N, and radical NO. (c) 2005 WILEY-VCH Verlag Gmbfl & Co. KWA, Weinheim. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26793 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liang H. W.,Lu Y. M.,Shen D. Z.,et al. P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO[J]. Physica Status Solidi a-Applications and Materials Science,2005,202(6):1060-1065. |
APA | Liang H. W..,Lu Y. M..,Shen D. Z..,Liu Y. C..,Yan J. F..,...&Fan X. W..(2005).P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO.Physica Status Solidi a-Applications and Materials Science,202(6),1060-1065. |
MLA | Liang H. W.,et al."P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO".Physica Status Solidi a-Applications and Materials Science 202.6(2005):1060-1065. |
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