P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

	P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO
其他题名	论文其他题名
	Liang H. W.; Lu Y. M.; Shen D. Z.; Liu Y. C.; Yan J. F.; Shan C. X.; Li B. H.; Zhang Z. Z.; Zhang J. Y.; Fan X. W.
	2005
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	0031-8965
卷号	202 期号:6 页码:1060-1065
摘要	N-doped p-type Zno thin films were grown by plasma molecular beam epitaxy (P-MBE) on c-plane sapphire (Al2O3) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (N-A - N-D) of 1.2 x 10(18) cm(-3) and minimum resistivity or 9,36 Omega cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X-ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p-type ZnO thin films are dominated by the emission from donor-acceptor pair recombination. The formation mechanism of p-type ZnO is explained by the optical emission spectra of radical N, and radical NO. (c) 2005 WILEY-VCH Verlag Gmbfl & Co. KWA, Weinheim.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26793
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang H. W.,Lu Y. M.,Shen D. Z.,et al. P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO[J]. Physica Status Solidi a-Applications and Materials Science,2005,202(6):1060-1065.
APA	Liang H. W..,Lu Y. M..,Shen D. Z..,Liu Y. C..,Yan J. F..,...&Fan X. W..(2005).P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO.Physica Status Solidi a-Applications and Materials Science,202(6),1060-1065.
MLA	Liang H. W.,et al."P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO".Physica Status Solidi a-Applications and Materials Science 202.6(2005):1060-1065.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Liang-2005-P-type Zn（123KB）			开放获取	--	浏览下载