Electrical and structural properties of p-type ZnO : N thin films prepared by plasma enhanced chemical vapour deposition

	Electrical and structural properties of p-type ZnO : N thin films prepared by plasma enhanced chemical vapour deposition
其他题名	论文其他题名
	Xiao Z. Y.; Liu Y. C.; Zhang J. Y.; Zhao D. X.; Lu Y. M.; Shen D. Z.; Fan X. W.
	2005
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	20 期号:8 页码:796-800
摘要	Thin films of p-type ZnO:N have been obtained by thermally oxidizing zinc oxynitride films prepared by plasma enhanced chemical vapour deposition (PECVD). The p-type ZnO:N thin film with a hole concentration of 2.7 x 1016 cm(-3) was obtained after an annealing process was conducted at 600 degrees C. A conductivity transition from n-type to p-type was observed, which was systematically researched via structural and compositional analyses. In terms of these analyses, it helped to better understand the properties and behaviour of nitrogen in ZnO. First, nitrogen was incorporated into ZnO films during the growth process to occupy oxygen positions, and also partly compensated some donors induced from non-stoichiometric (ZnO1-x) composition. Second, the amount of activated nitrogen gradually increased in an oxidizing atmosphere and exceeded those donor states to realize an effective compensation, yielding p-type conductivity during the course of thermal oxidation.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26770
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xiao Z. Y.,Liu Y. C.,Zhang J. Y.,et al. Electrical and structural properties of p-type ZnO : N thin films prepared by plasma enhanced chemical vapour deposition[J]. Semiconductor Science and Technology,2005,20(8):796-800.
APA	Xiao Z. Y..,Liu Y. C..,Zhang J. Y..,Zhao D. X..,Lu Y. M..,...&Fan X. W..(2005).Electrical and structural properties of p-type ZnO : N thin films prepared by plasma enhanced chemical vapour deposition.Semiconductor Science and Technology,20(8),796-800.
MLA	Xiao Z. Y.,et al."Electrical and structural properties of p-type ZnO : N thin films prepared by plasma enhanced chemical vapour deposition".Semiconductor Science and Technology 20.8(2005):796-800.

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