Formation of p-type MgZnO by nitrogen doping

	Formation of p-type MgZnO by nitrogen doping
其他题名	论文其他题名
	Wei Z. P.; Yao B.; Zhang Z. Z.; Lu Y. M.; Shen D. Z.; Li B. H.; Wang X. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.
	2006
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	89 期号:10
摘要	A wurtzite N-doped MgZnO film with 20 at. % Mg (MgZnO:N) was grown by plasma-assisted molecular beam epitaxy on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown MgZnO:N film behaves n-type conduction at room temperature, but transforms into p-type conduction after annealed for 1 h at 600 degrees C in an O-2 flow. The p-type MgZnO:N has a hole concentration of 6.1x10(17) cm(-3) and a mobility of 6.42 cm(2)/V s. X-ray photoelectron spectroscopy measurement indicates that substitution of N for O site is in forms of N atom (N)(O) and N molecule (N-2)(O) for the as-grown MgZnO:N, but almost only in a form of (N)(O) for the annealed MgZnO:N. The mechanism of the conduction-type transition induced by annealing is discussed in the present work. (c) 2006 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26746
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Yao B.,Zhang Z. Z.,et al. Formation of p-type MgZnO by nitrogen doping[J]. Applied Physics Letters,2006,89(10).
APA	Wei Z. P..,Yao B..,Zhang Z. Z..,Lu Y. M..,Shen D. Z..,...&Fan X. W..(2006).Formation of p-type MgZnO by nitrogen doping.Applied Physics Letters,89(10).
MLA	Wei Z. P.,et al."Formation of p-type MgZnO by nitrogen doping".Applied Physics Letters 89.10(2006).

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