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p-type conductivity and donor-acceptor pair emission in Cd1-xFexS dilute magnetic semiconductors
其他题名论文其他题名
Wu X. J.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Liu K. W.; Li B. H.; Lu Y. M.; Zhao D. X.; Yao B.
2006
发表期刊Applied Physics Letters
ISSN0003-6951
卷号89期号:26
摘要Cd1-xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the Cd1-xFexS thin films by elevating the growth temperature, which was attributed to the ionization of holes from trivalent Fe ions. High density Fe doping eventually reversed the conductivity of Cd1-xFexS thin film from n to p type. With increasing Fe content, the band-to-band transition at 2.5 eV was suppressed while the emission from the donor-acceptor pairs at 2.0-2.4 eV finally dominated the photoluminescence spectra. (c) 2006 American Institute of Physics.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26738
专题中科院长春光机所知识产出
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GB/T 7714
Wu X. J.,Shen D. Z.,Zhang Z. Z.,et al. p-type conductivity and donor-acceptor pair emission in Cd1-xFexS dilute magnetic semiconductors[J]. Applied Physics Letters,2006,89(26).
APA Wu X. J..,Shen D. Z..,Zhang Z. Z..,Zhang J. Y..,Liu K. W..,...&Yao B..(2006).p-type conductivity and donor-acceptor pair emission in Cd1-xFexS dilute magnetic semiconductors.Applied Physics Letters,89(26).
MLA Wu X. J.,et al."p-type conductivity and donor-acceptor pair emission in Cd1-xFexS dilute magnetic semiconductors".Applied Physics Letters 89.26(2006).
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