Electrical transport properties in nitrogen-doped p-type ZnO thin film

	Electrical transport properties in nitrogen-doped p-type ZnO thin film
其他题名	论文其他题名
	Xiao Z. Y.; Liu Y. C.; Li B. H.; Zhang J. Y.; Zhao D. X.; Lu Y. M.; Shen D. Z.; Fan X. W.
	2006
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	21 期号:12 页码:1522-1526
摘要	Electrical transport properties of p-type ZnO:N films grown by thermal activation of the nitrogen dopant were investigated via the temperature-dependent Hall effect. The Hall mobility increases with decreasing temperature. Varied scattering mechanisms have been analysed including lattice vibration scattering, ionized impurity scattering and dislocation scattering. A fit of the theory to temperature-dependent hole mobility experimental data in p-type ZnO: N films gives dislocation densities in the order of 10(12) cm(-2). The analysis shows dislocation scattering is indeed important for the p-type ZnO films grown on the mismatched substrate. The thermal ionization energy of the nitrogen acceptor is estimated to be 170 meV in terms of the temperature-dependent hole concentration. On the other hand, the emission related to the acceptors is observed in PL spectra.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26735
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xiao Z. Y.,Liu Y. C.,Li B. H.,et al. Electrical transport properties in nitrogen-doped p-type ZnO thin film[J]. Semiconductor Science and Technology,2006,21(12):1522-1526.
APA	Xiao Z. Y..,Liu Y. C..,Li B. H..,Zhang J. Y..,Zhao D. X..,...&Fan X. W..(2006).Electrical transport properties in nitrogen-doped p-type ZnO thin film.Semiconductor Science and Technology,21(12),1522-1526.
MLA	Xiao Z. Y.,et al."Electrical transport properties in nitrogen-doped p-type ZnO thin film".Semiconductor Science and Technology 21.12(2006):1522-1526.

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