Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution | |
| 其他题名 | 论文其他题名 |
| Chen Y. W.; Liu Y. C.; Lu S. X.; Xu C. S.; Shao C. L. | |
| 2006 | |
| 发表期刊 | Applied Physics B-Lasers and Optics
 |
| ISSN | 0946-2171 |
| 卷号 | 84期号:3页码:507-510 |
| 摘要 | In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO2/n-Si heterostructure were investigated. ZnO:In/SiO2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26716 |
| 专题 | 中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Chen Y. W.,Liu Y. C.,Lu S. X.,et al. Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution[J]. Applied Physics B-Lasers and Optics,2006,84(3):507-510. |
| APA | Chen Y. W.,Liu Y. C.,Lu S. X.,Xu C. S.,&Shao C. L..(2006).Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution.Applied Physics B-Lasers and Optics,84(3),507-510. |
| MLA | Chen Y. W.,et al."Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution".Applied Physics B-Lasers and Optics 84.3(2006):507-510. |
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