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Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution
其他题名论文其他题名
Chen Y. W.; Liu Y. C.; Lu S. X.; Xu C. S.; Shao C. L.
2006
发表期刊Applied Physics B-Lasers and Optics
ISSN0946-2171
卷号84期号:3页码:507-510
摘要In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO2/n-Si heterostructure were investigated. ZnO:In/SiO2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26716
专题中科院长春光机所知识产出
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Chen Y. W.,Liu Y. C.,Lu S. X.,et al. Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution[J]. Applied Physics B-Lasers and Optics,2006,84(3):507-510.
APA Chen Y. W.,Liu Y. C.,Lu S. X.,Xu C. S.,&Shao C. L..(2006).Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution.Applied Physics B-Lasers and Optics,84(3),507-510.
MLA Chen Y. W.,et al."Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution".Applied Physics B-Lasers and Optics 84.3(2006):507-510.
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