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The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment
其他题名论文其他题名
Wang X. H.; Yao B.; Zhang Z. Z.; Li B. H.; Wei Z. P.; Shen D. Z.; Lu Y. M.; Fan X. W.
2006
发表期刊Semiconductor Science and Technology
ISSN0268-1242
卷号21期号:4页码:494-497
摘要Li-doped p-type ZnO was fabricated by heat treatment of Zn-Li alloy film with 2 at% Li on a quartz substrate in N-2, flow at 500 degrees C for 2 h, and then in 02 flow at 700 degrees C for 1 h. The room-temperature resistivity was measured to be 678.34 Omega cm with a Hall mobility of 1.03 cm(2) V-1 s(-1) and a carrier concentration of 8.934 x 10(15) cm(-3). Three emission peaks centred at 3.347, 3.302 and 3.234 eV are observed in the photoluminescence spectrum measured at 12 K and are due to neutral acceptor-bound exciton emission, conduction band to acceptor level transition and donor-acceptor pair recombination emission, respectively. The p-type conduction of the Li-doped ZnO may be attributed to the formation of a Li-Zn-N complex acceptor. The optical level of the acceptor is estimated to be about 137 meV. The mechanism of formation of the Li-doped p-type ZnO is discussed in the present work.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26714
专题中科院长春光机所知识产出
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GB/T 7714
Wang X. H.,Yao B.,Zhang Z. Z.,et al. The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment[J]. Semiconductor Science and Technology,2006,21(4):494-497.
APA Wang X. H..,Yao B..,Zhang Z. Z..,Li B. H..,Wei Z. P..,...&Fan X. W..(2006).The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment.Semiconductor Science and Technology,21(4),494-497.
MLA Wang X. H.,et al."The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment".Semiconductor Science and Technology 21.4(2006):494-497.
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