Changchun Institute of Optics,Fine Mechanics and Physics,CAS
The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment | |
其他题名 | 论文其他题名 |
Wang X. H.; Yao B.; Zhang Z. Z.; Li B. H.; Wei Z. P.; Shen D. Z.; Lu Y. M.; Fan X. W. | |
2006 | |
发表期刊 | Semiconductor Science and Technology
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ISSN | 0268-1242 |
卷号 | 21期号:4页码:494-497 |
摘要 | Li-doped p-type ZnO was fabricated by heat treatment of Zn-Li alloy film with 2 at% Li on a quartz substrate in N-2, flow at 500 degrees C for 2 h, and then in 02 flow at 700 degrees C for 1 h. The room-temperature resistivity was measured to be 678.34 Omega cm with a Hall mobility of 1.03 cm(2) V-1 s(-1) and a carrier concentration of 8.934 x 10(15) cm(-3). Three emission peaks centred at 3.347, 3.302 and 3.234 eV are observed in the photoluminescence spectrum measured at 12 K and are due to neutral acceptor-bound exciton emission, conduction band to acceptor level transition and donor-acceptor pair recombination emission, respectively. The p-type conduction of the Li-doped ZnO may be attributed to the formation of a Li-Zn-N complex acceptor. The optical level of the acceptor is estimated to be about 137 meV. The mechanism of formation of the Li-doped p-type ZnO is discussed in the present work. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26714 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang X. H.,Yao B.,Zhang Z. Z.,et al. The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment[J]. Semiconductor Science and Technology,2006,21(4):494-497. |
APA | Wang X. H..,Yao B..,Zhang Z. Z..,Li B. H..,Wei Z. P..,...&Fan X. W..(2006).The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment.Semiconductor Science and Technology,21(4),494-497. |
MLA | Wang X. H.,et al."The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment".Semiconductor Science and Technology 21.4(2006):494-497. |
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